onsemi-Single Bipolar Transistors-NJVMJD127T4G

Description

type;PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);8A/Pd - Power Dissipation;20W/Operating Temperature;-65℃~+150℃@(Tj)/DC Current Gain;1000/Current - Collector Cutoff;10uA/Vce Saturation(VCE(sat));4V


1000 PNP 20W 8A 100V TO-252(DPAK) Single Bipolar Transistors RoHS

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type;PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);8A/Pd - Power Dissipation;20W/Operating Temperature;-65℃~+150℃@(Tj)/DC Current Gain;1000/Current - Collector Cutoff;10uA/Vce Saturation(VCE(sat));4V1000 PNP 20W 8A... Read more

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    Description

    type;PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);8A/Pd - Power Dissipation;20W/Operating Temperature;-65℃~+150℃@(Tj)/DC Current Gain;1000/Current - Collector Cutoff;10uA/Vce Saturation(VCE(sat));4V


    1000 PNP 20W 8A 100V TO-252(DPAK) Single Bipolar Transistors RoHS

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