onsemi-Single Bipolar Transistors-NJW21193G

Description

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;250V/Current - Collector(Ic);16A/Pd - Power Dissipation;200W/Operating Temperature;-65℃~+150℃/DC Current Gain;20/Transition frequency(fT);4MHz/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));1.4V/Emitter-Base Voltage(Vebo);5V


Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-3P

Product form

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;250V/Current - Collector(Ic);16A/Pd - Power Dissipation;200W/Operating Temperature;-65℃~+150℃/DC Current Gain;20/Transition frequency(fT);4MHz/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));1.4V/Emitter-Base Voltage(Vebo);5VBipolar... Read more

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    Description

    type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;250V/Current - Collector(Ic);16A/Pd - Power Dissipation;200W/Operating Temperature;-65℃~+150℃/DC Current Gain;20/Transition frequency(fT);4MHz/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));1.4V/Emitter-Base Voltage(Vebo);5V


    Bipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole TO-3P

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