onsemi-Single Bipolar Transistors-SMUN5111DW1T1G

Description

type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;385mW/Operating Temperature;-55℃~+150℃/DC Current Gain;35/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));250mV


35 PNP 385mW 100mA 50V SOT-363-6 Single Bipolar Transistors RoHS

Product form

type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;385mW/Operating Temperature;-55℃~+150℃/DC Current Gain;35/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));250mV35 PNP 385mW 100mA... Read more

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    Description

    type;PNP/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;385mW/Operating Temperature;-55℃~+150℃/DC Current Gain;35/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));250mV


    35 PNP 385mW 100mA 50V SOT-363-6 Single Bipolar Transistors RoHS

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