Drain to Source Voltage;100V/Gate Charge(Qg);900pC@10V/Number;1 N-channel/Pd - Power Dissipation;600mW/RDS(on);8Ω/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;15pF100V 8Ω 1 N-channel 600mW CPH-3 Single FETs,... Read more

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