onsemi-Single FETs, MOSFETs-2N7002ET7G

Description

Drain to Source Voltage;60V/Gate Charge(Qg);810pC@5V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);260mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;40pF


N-Channel 60V 260mA 300mW Surface Mount SOT-23

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Drain to Source Voltage;60V/Gate Charge(Qg);810pC@5V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);260mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;40pFN-Channel 60V 260mA... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);810pC@5V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);260mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;40pF


    N-Channel 60V 260mA 300mW Surface Mount SOT-23

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