onsemi-Single FETs, MOSFETs-2SJ632-TD-E

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9nC@10V/Pd - Power Dissipation;3.5W/RDS(on);360mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;365pF/Output Capacitance(Coss);39pF


60V 360mΩ@10V 3.5W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9nC@10V/Pd - Power Dissipation;3.5W/RDS(on);360mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;365pF/Output Capacitance(Coss);39pF60V 360mΩ@10V... Read more

$1.26 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9nC@10V/Pd - Power Dissipation;3.5W/RDS(on);360mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;365pF/Output Capacitance(Coss);39pF


    60V 360mΩ@10V 3.5W Single FETs, MOSFETs RoHS

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