onsemi-Single FETs, MOSFETs-2SK3614-Q-TD-E

Description

Drain to Source Voltage;60V/Gate Charge(Qg);7.8nC@10V/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);215mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;300pF


60V 215mΩ@4V 3.5W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Gate Charge(Qg);7.8nC@10V/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);215mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;300pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);7.8nC@10V/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);215mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;300pF


    60V 215mΩ@4V 3.5W Single FETs, MOSFETs RoHS

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