onsemi-Single FETs, MOSFETs-BSS123-F169

Description

Drain to Source Voltage;100V/Gate Charge(Qg);2.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;73pF


100V 10Ω@4.5V 1 N-channel 360mW SOT-23-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);2.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);2.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;73pF


    100V 10Ω@4.5V 1 N-channel 360mW SOT-23-3 Single FETs, MOSFETs RoHS

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