onsemi-Single FETs, MOSFETs-BSS123L

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;21.5pF


100V 6Ω@10V 1 N-channel 360mW SOT-23-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;21.5pF100V 6Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;360mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;21.5pF


    100V 6Ω@10V 1 N-channel 360mW SOT-23-3 Single FETs, MOSFETs RoHS

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