onsemi-Single FETs, MOSFETs-BVSS123LT1G

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;225mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;20pF


N-Channel 100V 170mA 225mW Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;225mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;20pFN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;225mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;20pF


    N-Channel 100V 170mA 225mW Surface Mount SOT-23

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