onsemi-Single FETs, MOSFETs-ECH8309-TL-H

Description

Drain to Source Voltage;12V/Gate Charge(Qg);18nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.5W/RDS(on);53mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;1.78nF/Output Capacitance(Coss);540pF


P-Channel 12V 9.5A 1.5W ECH-8

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);18nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.5W/RDS(on);53mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;1.78nF/Output Capacitance(Coss);540pFP-Channel... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);18nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.5W/RDS(on);53mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;1.78nF/Output Capacitance(Coss);540pF


    P-Channel 12V 9.5A 1.5W ECH-8

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