onsemi-Single FETs, MOSFETs-EFC2K101NUZTDG

Description

Drain to Source Voltage;12V/Gate Charge(Qg);16nC@3.8V/Number;2 N-Channel/Pd - Power Dissipation;1.4W/RDS(on);6.2mΩ@4.5V/Configuration;Common Drain/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.3V


12V 6.2mΩ@4.5V 2 N-Channel 1.4W WLCSP-6(1.2x1.8) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);16nC@3.8V/Number;2 N-Channel/Pd - Power Dissipation;1.4W/RDS(on);6.2mΩ@4.5V/Configuration;Common Drain/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.3V12V 6.2mΩ@4.5V 2 N-Channel 1.4W... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);16nC@3.8V/Number;2 N-Channel/Pd - Power Dissipation;1.4W/RDS(on);6.2mΩ@4.5V/Configuration;Common Drain/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));1.3V


    12V 6.2mΩ@4.5V 2 N-Channel 1.4W WLCSP-6(1.2x1.8) Single FETs, MOSFETs RoHS

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