onsemi-Single FETs, MOSFETs-EFC3C001NUZTCG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;1.6W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V


20V 30mΩ@4.5V 2 N-Channel 1.6W WLCSP-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;1.6W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V20V 30mΩ@4.5V 2 N-Channel... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;1.6W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V


    20V 30mΩ@4.5V 2 N-Channel 1.6W WLCSP-4 Single FETs, MOSFETs RoHS

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