onsemi-Single FETs, MOSFETs-EFC4611-TR

Description

Drain to Source Voltage;24V/Gate Charge(Qg);20nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);57.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V


24V 57.5mΩ@2.5V 1.6W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;24V/Gate Charge(Qg);20nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);57.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V24V 57.5mΩ@2.5V 1.6W Single FETs,... Read more

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    Description

    Drain to Source Voltage;24V/Gate Charge(Qg);20nC@4.5V/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);57.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V


    24V 57.5mΩ@2.5V 1.6W Single FETs, MOSFETs RoHS

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