onsemi-Single FETs, MOSFETs-FCD2250N80Z

Description

Drain to Source Voltage;800V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);2.25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.75pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;585pF


N-Channel 800V 2.6A 39W Surface Mount TO-252(DPAK)

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);2.25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.75pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;39W/RDS(on);2.25Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.75pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;585pF


    N-Channel 800V 2.6A 39W Surface Mount TO-252(DPAK)

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