onsemi-Single FETs, MOSFETs-FDC2612

Description

Drain to Source Voltage;200V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);725mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;234pF/Output Capacitance(Coss);18pF


N-Channel 200V 1.1A 1.6W Surface Mount TSOT-23-6

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);725mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);725mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;234pF/Output Capacitance(Coss);18pF


    N-Channel 200V 1.1A 1.6W Surface Mount TSOT-23-6

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