onsemi-Single FETs, MOSFETs-FDC3612

Description

Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);55pF


N-Channel 100V 2.6A 1.6W Surface Mount SuperSOT-6

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Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);55pF


    N-Channel 100V 2.6A 1.6W Surface Mount SuperSOT-6

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