onsemi-Single FETs, MOSFETs-FDC5614P

Description

Drain to Source Voltage;60V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;759pF/Output Capacitance(Coss);90pF


P-Channel 60V 3A 1.6W Surface Mount SuperSOT-6

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);135mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;759pF/Output Capacitance(Coss);90pF


    P-Channel 60V 3A 1.6W Surface Mount SuperSOT-6

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