onsemi-Single FETs, MOSFETs-FDC5661N-F085

Description

Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);47mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;763pF


N-Channel 60V 4.3A 1.6W Surface Mount TSOT-23-6

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);47mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;763pFN-Channel 60V 4.3A... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);47mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;763pF


    N-Channel 60V 4.3A 1.6W Surface Mount TSOT-23-6

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