onsemi-Single FETs, MOSFETs-FDC634P

Description

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);110mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;779pF/Output Capacitance(Coss);121pF


P-Channel 20V 3.5A 1.6W Surface Mount TSOT-23-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);110mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$0.63 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);110mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);56pF/Current - Continuous Drain(Id);3.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;779pF/Output Capacitance(Coss);121pF


    P-Channel 20V 3.5A 1.6W Surface Mount TSOT-23-6

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