onsemi-Single FETs, MOSFETs-FDC637AN

Description

Drain to Source Voltage;20V/Gate Charge(Qg);10.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;1.125nF


N-Channel 20V 6.2A 1.6W Surface Mount SuperSOT-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);10.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);10.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);145pF/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;1.125nF


    N-Channel 20V 6.2A 1.6W Surface Mount SuperSOT-6

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