onsemi-Single FETs, MOSFETs-FDC638APZ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);195pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);210pF


P-Channel 20V 4.5A 1.6W Surface Mount SuperSOT-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);195pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$0.66 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);195pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);210pF


    P-Channel 20V 4.5A 1.6W Surface Mount SuperSOT-6

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