onsemi-Single FETs, MOSFETs-FDC653N

Description

Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);220pF


N-Channel 30V 5A 1.6W Surface Mount SSOT-6

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);220pF


    N-Channel 30V 5A 1.6W Surface Mount SSOT-6

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