onsemi-Single FETs, MOSFETs-FDC654P

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;298pF


P-Channel 30V 3.6A 1.6W Surface Mount SuperSOT-6

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Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.2nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);75mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;298pF


    P-Channel 30V 3.6A 1.6W Surface Mount SuperSOT-6

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