onsemi-Single FETs, MOSFETs-FDC855N
- onsemi
Drain to Source Voltage;30V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.6W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$0.66 Excl. VAT
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