onsemi-Single FETs, MOSFETs-FDC8886

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;465pF


N-Channel 30V 6.5A 1.6W Surface Mount TSOT-23-6

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Drain to Source Voltage;30V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.6W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;465pF


    N-Channel 30V 6.5A 1.6W Surface Mount TSOT-23-6

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