onsemi-Single FETs, MOSFETs-FDD6N20TM

Description

Drain to Source Voltage;200V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;230pF


200V 800mΩ@10V 1 N-channel 40W TO-252AA Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;230pF200V 800mΩ@10V 1... Read more

$1.14 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);6.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;230pF


    200V 800mΩ@10V 1 N-channel 40W TO-252AA Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account