onsemi-Single FETs, MOSFETs-FDD8424H-F085A

Description

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.33nF/Output Capacitance(Coss);185pF


40V 70mΩ@4.5V 1 N-Channel + 1 P-Channel 35W TO-252-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Configuration;Half-Bridge/Current -... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.33nF/Output Capacitance(Coss);185pF


    40V 70mΩ@4.5V 1 N-Channel + 1 P-Channel 35W TO-252-4 Single FETs, MOSFETs RoHS

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