onsemi-Single FETs, MOSFETs-FDG316P

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6W/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;165pF


30V 300mΩ@4.5V 1 P-Channel 6W SC-70-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6W/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;6W/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;165pF


    30V 300mΩ@4.5V 1 P-Channel 6W SC-70-6 Single FETs, MOSFETs RoHS

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