onsemi-Single FETs, MOSFETs-FDG6321C-F169

Description

Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);34pF


25V 450mΩ@4.5V 300mW Single FETs, MOSFETs RoHS

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Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Type;N-Channel + P-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);34pF


    25V 450mΩ@4.5V 300mW Single FETs, MOSFETs RoHS

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