onsemi-Single FETs, MOSFETs-FDMA008P20LZ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);39nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;4.383nF


20V 13mΩ@4.5V 1 P-Channel 2.4W PQFN-6(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);39nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;4.383nF20V 13mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);39nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;4.383nF


    20V 13mΩ@4.5V 1 P-Channel 2.4W PQFN-6(2x2) Single FETs, MOSFETs RoHS

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