onsemi-Single FETs, MOSFETs-FDMC8884-FS

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.3W;18W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A;15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;685pF


30V 19mΩ@10V 1 N-channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.3W;18W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A;15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;685pF30V 19mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.3W;18W/RDS(on);19mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A;15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;685pF


    30V 19mΩ@10V 1 N-channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS

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