onsemi-Single FETs, MOSFETs-FDMS7670AS

Description

Drain to Source Voltage;30V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);3.2mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;4.225nF


30V 3.2mΩ@7V 1 N-channel 65W Power-56-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);3.2mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;65W/RDS(on);3.2mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);165pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;4.225nF


    30V 3.2mΩ@7V 1 N-channel 65W Power-56-8 Single FETs, MOSFETs RoHS

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