onsemi-Single FETs, MOSFETs-FDMS86101DC

Description

Drain to Source Voltage;100V/Gate Charge(Qg);44nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;3.135nF


N-Channel 100V 60A 125W Surface Mount PQFN-8(5x6)

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);44nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);44nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;3.135nF


    N-Channel 100V 60A 125W Surface Mount PQFN-8(5x6)

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