onsemi-Single FETs, MOSFETs-FDMS86263P-23507X

Description

Drain to Source Voltage;150V/Gate Charge(Qg);63nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;104W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;22A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.905nF


150V 53mΩ@10V 1 P-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);63nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;104W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;22A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.905nF150V 53mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);63nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;104W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;22A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.905nF


    150V 53mΩ@10V 1 P-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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