onsemi-Single FETs, MOSFETs-FDMS9600S

Description

Drain to Source Voltage;30V/Gate Charge(Qg);13nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.705nF


30V 2 N-Channel 2.5W Power-56-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);13nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$1.41 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);13nC@10V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.705nF


    30V 2 N-Channel 2.5W Power-56-8 Single FETs, MOSFETs RoHS

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