onsemi-Single FETs, MOSFETs-FDN361BN

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500mW/RDS(on);160mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;193pF/Output Capacitance(Coss);47pF


30V 160mΩ@4.5V 1 N-channel 500mW SOT-23-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500mW/RDS(on);160mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500mW/RDS(on);160mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;193pF/Output Capacitance(Coss);47pF


    30V 160mΩ@4.5V 1 N-channel 500mW SOT-23-3 Single FETs, MOSFETs RoHS

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