onsemi-Single FETs, MOSFETs-FDN8601

Description

Drain to Source Voltage;100V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);175mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;210pF/Output Capacitance(Coss);65pF


100V 175mΩ@6V 1 N-channel 1.5W SOT-23-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);175mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);175mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;210pF/Output Capacitance(Coss);65pF


    100V 175mΩ@6V 1 N-channel 1.5W SOT-23-3 Single FETs, MOSFETs RoHS

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