onsemi-Single FETs, MOSFETs-FDP045N10A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Pd - Power Dissipation;263W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.27nF


100V 4.5mΩ@10V 1 N-channel 263W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Pd - Power Dissipation;263W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.27nF100V 4.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Pd - Power Dissipation;263W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.27nF


    100V 4.5mΩ@10V 1 N-channel 263W TO-220-3 Single FETs, MOSFETs RoHS

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