onsemi-Single FETs, MOSFETs-FDS4672A

Description

Drain to Source Voltage;40V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.766nF/Output Capacitance(Coss);346pF


40V 13mΩ@4.5V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.766nF/Output Capacitance(Coss);346pF


    40V 13mΩ@4.5V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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