onsemi-Single FETs, MOSFETs-FDS5351

Description

Drain to Source Voltage;60V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.31nF/Output Capacitance(Coss);120pF


N-Channel 60V 6.1A 5W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5W/RDS(on);35mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);6.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.31nF/Output Capacitance(Coss);120pF


    N-Channel 60V 6.1A 5W Surface Mount SO-8

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