onsemi-Single FETs, MOSFETs-FDS6575

Description

Drain to Source Voltage;20V/Gate Charge(Qg);74nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@2.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);451pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.951nF/Output Capacitance(Coss);884pF


P-Channel 20V 10A 2.5W Surface Mount SOIC-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);74nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@2.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);451pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);74nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@2.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);451pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.951nF/Output Capacitance(Coss);884pF


    P-Channel 20V 10A 2.5W Surface Mount SOIC-8

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