onsemi-Single FETs, MOSFETs-FDS6679Z

Description

Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);498pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.939nF


30V 13mΩ@4.5V 1 P-Channel 50W SOIC-8 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);498pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;50W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);498pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.939nF


    30V 13mΩ@4.5V 1 P-Channel 50W SOIC-8 Single FETs, MOSFETs RoHS

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