onsemi-Single FETs, MOSFETs-FDS6982

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);8.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.085nF


30V 35mΩ@4.5V 2 N-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);26nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);8.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;2W/RDS(on);35mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);8.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.085nF


    30V 35mΩ@4.5V 2 N-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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