onsemi-Single FETs, MOSFETs-FDS8878-F123

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;897pF


30V 17mΩ@4.5V 2.5W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;897pF30V... Read more

$0.87 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);111pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;897pF


    30V 17mΩ@4.5V 2.5W Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account