onsemi-Single FETs, MOSFETs-FDS8880

Description

Drain to Source Voltage;30V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.235nF


N-Channel 30V 11.6A 2.5W Surface Mount SO-8

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Drain to Source Voltage;30V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);11.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.235nF


    N-Channel 30V 11.6A 2.5W Surface Mount SO-8

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