onsemi-Single FETs, MOSFETs-FDS8962C

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;575pF/Output Capacitance(Coss);528pF


30V 30mΩ@10V 1 N-Channel + 1 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;575pF/Output Capacitance(Coss);528pF


    30V 30mΩ@10V 1 N-Channel + 1 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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