onsemi-Single FETs, MOSFETs-FDV303N

Description

Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);28pF


N-Channel 25V 680mA 350mW Surface Mount SOT-23

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Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);2.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);28pF


    N-Channel 25V 680mA 350mW Surface Mount SOT-23

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