onsemi-Single FETs, MOSFETs-FDW2521C

Description

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.082nF


20V 21mΩ@4.5V 1 N-Channel + 1 P-Channel 1W TSSOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current -... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.082nF


    20V 21mΩ@4.5V 1 N-Channel + 1 P-Channel 1W TSSOP-8 Single FETs, MOSFETs RoHS

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