onsemi-Single FETs, MOSFETs-FDZ3N513ZT

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@3.2V/Operating Temperature -;-55℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;85pF/Output Capacitance(Coss);85pF


30V 520mΩ@3.2V 1 P-Channel 1W WLCSP-4(1x1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@3.2V/Operating Temperature -;-55℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);520mΩ@3.2V/Operating Temperature -;-55℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;85pF/Output Capacitance(Coss);85pF


    30V 520mΩ@3.2V 1 P-Channel 1W WLCSP-4(1x1) Single FETs, MOSFETs RoHS

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